RN2910

RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2910,RN2911 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1910, RN1911 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC P C* Tj Tstg Rating −50 −50 −5 −100 200 150 −55~150 Unit V V V mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 6.8mg ― ― 2-2J1A * : Total rating Equivalent Circuit (Top View) 1 2001-06-07 Free Datasheet http://www.datasheet4u.com/ RN2910,RN2911 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN2910 RN2911 Symbol ICBO IEBO hFE VCE (sat) fT Cob ― Test Circuit ― ― ― ― ― ― ― Test Condition VCB = −50V, IE = 0 VEB = −5V, IC = 0 VCE = −5V, IC = −1mA IC = −5mA, IB = −0.25mA VCE = −10V, IC = −5mA VCB = −10V, IE = 0V, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― −0.1 200 3 4.7 10 Max −100 −100 400 −0.3 ― 6 6.11 13 Unit nA nA ― V MHz pF kΩ 2 2001-06-07 Free Datashee...