RN2909AFS

RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2907AFS, RN2908AFS, RN2909AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 0.1±0.05 0.8±0.05 0.1±0.05 0.15±0.05 4 Q2 3 Unit: mm 0.35 0.35 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly costs. 0.7±0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 2 3 6 5 4 0.1±0.05 Complementary to the RN1907AFS to RN1909AFS +0.02 -0.04 C 0.48 Equivalent Circuit and Bias Resistor Values Type No. RN2907AFS RN2908AFS RN2909AFS E R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 B R1 R2 fS6 JEDEC JEITA TOSHIBA 1. EMITTER1 2. BASE1 3. COLLECTOR2 4. EMITTER2 5. BASE2 6. COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) ― ― 2-1F1D Weight: 1 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristic Collector-base voltage Collector-emitter voltage RN2907AFS to RN2909AFS RN2907AFS Emitter-base voltage RN2908AFS RN2909AFS Collector current Collector power dissipation Junction temperature Storage temperature range RN2907AFS to RN2909AFS IC PC (Note 1) Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −6 −7 −15 −80 50 150 −55 to 150 mA mW °C °C 1 2 V Q1 Unit V V 6 5 Equivalent Circuit (top view) Note: Using continuously under heavy loads (e.g. the applicat...