PZTA96ST1

PZTA96ST1 Preferred Device High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation Up to TA = 25°C (Note 1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value –450 –450 –5.0 –500 1.5 –65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C 4 http://onsemi.com COLLECTOR 2,4 BASE 1 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient (Note 1) Symbol RqJA Max 83.3 Unit °C 1 2 3 AWW ZTA96 ELECTRICAL CHARACTERISTICS (Note 2) Characteristic Symbol Min Max Unit SOT–223, TO–261AA CASE 318E STYLE 1 A WW = Location = Work Week OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector–Base Cutoff Current (VCB = –400 Vdc, IE = 0) Emitter–Base Cutoff Current (VBE = –4.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –450 –450 –5.0 – – – – – –0.1 –0.1 Vdc Vdc Vdc mAdc mAdc Preferred devices are recommended choices for future use and best overall value. ORDERING INFORMATION Device PZTA96ST1 Package SOT–223 Shipping 1000/Tape & Reel ON CHARACTERISTICS DC Current Gain (Note 3) (IC = –10 mAdc, VCE = –10 Vdc) Saturation Voltages (IC = –20 mAdc, IB = –2.0 mAdc) (IC = –20 mAdc, IB = –2.0 mAdc) hFE 50 150 – Vdc VCE(sat) VBE(sat) – – –0.6 –1.0 1. Device m...