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PMDXB950UPE
dual P-channel Trench MOSFET
Description
DF N1 0 PMDXB950UPE 10 September 2013 10B -6 20 V, dual P-channel Trench MOSFET Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect
Transistor
(FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSF...
NXP
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