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PMDXB600UNE

NXP
Part Number PMDXB600UNE
Manufacturer NXP
Description dual N-channel Trench MOSFET
Published Nov 11, 2013
Detailed Description DF N1 0 PMDXB600UNE 16 September 2013 10B -6 20 V, dual N-channel Trench MOSFET Product data sheet 1. General descr...
Datasheet PDF File PMDXB600UNE PDF File

PMDXB600UNE
PMDXB600UNE

Overview
DF N1 0 PMDXB600UNE 16 September 2013 10B -6 20 V, dual N-channel Trench MOSFET Product data sheet 1.
General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3.
Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circui...


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