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JDV2S19S

Toshiba

VCO


Description
JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band High capacitance ratio: C1V/C4V = 1.8 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Sym...



Toshiba

JDV2S19S

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