STP18N55M5

STP18N55M5 Datasheet N-channel 550 V, 150 mΩ typ., 16 A MDmesh M5 Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP18N55M5 600 V 192 mΩ 16 A Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Applications Switching applications G(1) Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative S(3) vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly AM01475v1_noZen suitable for applications requiring high power and superior efficiency. Product status link STP18N55M5 Product summary Order code STP18N55M5 Marking 18N55M5 Package TO-220 Packing Tube DS14410 - Rev 1 - August 2023 For further information contact your local STMicroelectronics sales office. www.st.com STP18N55M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 16 A, di/dt ≤ 400 A/μs, VDS (peak) <...