Ultrahigh-Speed Switching Diode
Ordering number : EN9054
RD2006RH-SB
SANYO Semiconductors
DATA SHEET
RD2006RH-SB
Features
• • •
Diffused Junction S...
Description
Ordering number : EN9054
RD2006RH-SB
SANYO Semiconductors
DATA SHEET
RD2006RH-SB
Features
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
VRRM=600V VF=1.75V max. (IF=20A) trr=21ns (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=63°C Tc=25°C (SANYO’s ideal heat dissipation condition) *, Package limited, DC 50Hz Sine wave, 1 pulse Conditions Ratings 600 20 30 220 150 --55 to +150 Unit V A A A °C °C
IO IF(RMS) IFSM
Tj Tstg
*. SANYO’s condition is radiation from backside The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium
Package Dimensions
unit : mm (typ) 7534-001
16.0 3.4 5.6 3.1 8.0
Product & Package Information
Package : TO-3PMLH JEITA, JEDEC : SC-93, TO-247, SOT-199 Minimum Packing Quantity : 100 pcs./tray
5.0
Marking
Electrical Connection
2
21.0 4.0 1.0
22.0
0.8
2.8 2.0 20.4 0.7 0.9
RD2006
LOT No.
2.1 1
5.45 1 2 3
5.45 3.5
1 : Cathode 3 : Anode SANYO : TO-3PMLH-SB
5.45
5.45
http://semicon.sanyo.com/en/network
60811SA TKIM TC-00002614 No.9054-1/3
Free Datasheet http://www.datasheet4u.com/
RD2006RH-SB
Electrical Characteristics at Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Res...
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