RD2004LS

Ordering number : ENA0968 RD2004LS SANYO Semiconductors DATA SHEET RD2004LS Features Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast forward / reverse recovery time. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IOP IFSM Tj Tstg PW≤100μs, duty≤50% 50Hz sine wave, 1 cycle Conditions Ratings 400 400 20 80 180 150 --55 to +150 Unit V V A A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rth(j-c) IR=1mA IF=20A VR=400V IF=10A, di / dt=100A/μs Junction-Case : Smoothed DC Conditions Ratings min 400 1.5 100 50 4.0 typ max Unit V V μA ns °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrumen...