2N4234 2N4235 2N4236
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTO...
2N4234 2N4235 2N4236
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4234, 2N4235, and 2N4236 are silicon
PNP transistors mounted in a hermetically sealed metal case, designed for power amplifier, power driver, and switching power supply applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
2N4234 2N4235 2N4236
40 60
80
40 60
80
7.0
1.0
3.0
0.2
6.0
1.0
-65 to +200
29
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEX
VCE=Rated VCEO, VBE=1.5V
ICEX
VCE=30V, VBE=1.5V, TC=150°C (2N4234)
ICEX
VCE=40V, VBE=1.5V, TC=150°C (2N4235)
ICEX
VCE=60V, VBE=1.5V, TC=150°C (2N4236)
ICEO
VCE=30V (2N4234)
ICEO
VCE=40V (2N4235)
ICEO
VCE=60V (2N4236)
IEBO
VEB=7.0V
BVCEO
IC=100mA (2N4234)
40
BVCEO
IC=100mA (2N4235)
60
BVCEO
IC=100mA (2N4236)
80
VCE(SAT) IC=1.0A, IB=125mA
VBE(SAT) IC=1.0A, IB=100mA
VBE(ON) VCE=1.0V, IC=250mA
MAX 100 100 1.0 1.0 1.0 1.0 1.0 1.0 500
0.6 1.5 1.0
UNITS V V V A A A W W °C
°C/W
UNITS μA μA mA mA mA mA mA mA μA V V V V V V
R0 (22-October 2013...