BVSS123LT1G

BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS ± 20 Vdc VGSM ± 40 Vpk Drain Current − Continuous (Note 1) − Pulsed (Note 2) Adc ID 0.17 IDM 0.68 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR− 5 = 1.0  0.75  0.062 in. www.onsemi.com 170 mAMPS 100 VOLTS RDS(on) = 6 W N−Channel 3 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain 3 1 2 SOT−23 CASE 318 STYLE 21 SA MG G 12 Gate Source SA = Device Code M = Date Code G = Pb−Free Package (*Note: Microdot may be in either location) *Date Code orientation and/or position may vary depen...