MRF329
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF329 is Designed for Wide Band Large-Signal Output and Dr...
MRF329
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI MRF329 is Designed for Wide Band Large-Signal Output and Driver Amplifier Stages in the 100-500 MHz Frequency Range.
PACKAGE STYLE .400X.425" 6L FLG.
FEATURES INCLUDE:
Gold Metalization 3:1 VSWR I/O Network Matching
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC
O O
9.0 A (CONT) 12.0 A (PEAK) 60 V 270 W @ TC = 25 C -65 C to +150 C -65 C to +150 C 0.65 C/W
O O O O
1 & 3 = EMITTER 2 = COLLECTOR 4 = BASE
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVCEO BVEBO ICBO hFE Cob GPE η ψ IC = 80 mA IC = 80 mA IC = 80 mA IE = 8.0 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCC = 28 V VCC = 28 V VSWR = 3:1
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60 60 30 4.0 5.0
UNITS
V V V V mA --pF dB %
IC = 4.0 A f = 1.0 MHz Pout = 100 W Pout = 100 W
ALL PHASE ANGLES
20 95 7.0 50 9.7 60
80 125
f = 400 MHz f = 400 MHz
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Free Datasheet http://www.datasheet4u.com/
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