TC3889

TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES 5W Typical Output Power 12dB Typical Linear Power Gain at 2.0GHz High Linearity: IP3 = 47 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 18V Wg = 12 mm 100 % DC Tested Suitable for High Reliability Application The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is designed to provide the single power supply application. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (@ 2.0 GHz) Symbol P1dB GL IP3 PAE IDS BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10 V Linear Power Gain VDS = 10 V Intercept Point of the 3rd-order Intermodulation VDS = 10 V, *PSCL = 26 dBm Power Added Efficiency at 1dB Compression Power Drain-Source Current at VDS = 10 V Drain-Gate Breakdown Voltage at IDGO = 6mA Thermal Resistance MIN 36 TYP 37 12 47 35 1300 22 2.7 MAX UNIT dBm dB dBm % mA Volts °C/W PHOTO ENLARGEMENT DESCRIPTION 18 Note: *PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan Cou...