2N4126
Small Signal Transistors (PNP)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ PNP Silicon Ep...
2N4126
Small Signal
Transistors (
PNP)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦
PNP Silicon Epitaxial
Transistor
for switching and amplifier applications. Especially suit-able for AF-driver and low-power output stages.
♦ As complementary type, the
NPN transistor 2N4124 is recommended.
max. ∅ .022 (0.55) .098 (2.5) E B C
MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
1)
Value 25 25 4 200 800 50 6251) 150 –65 to +150
Unit V V V mA mA mA mW °C °C
–VCEO –VCBO –VEBO –IC –ICM –IB Ptot Tj TS
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98
2N4126
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol DC Current Gain at VCE = –1 V, IC = –2.0 mA at VCE = –1 V, IC = –50 mA Collector Cutoff Current at VCB = –20 V Emitter Cutoff Current at VEB = –3 V Collector Saturation Voltage at IC = –50 mA, IB = –5 mA Base Saturation Voltage at IC = –50 mA, IB = –5 mA Collector-Emitter Breakdown Voltage at IC = –1 mA Collector-Base Breakdown Voltage at IC = –10 µA Emitter-Base Breakdown Voltage at I...
