NVMFS5834NL

NTMFS5834NL, NVMFS5834NL Power MOSFET Features 40 V, 75 A, 9.3 mW, Single N−Channel Low RDS(on) Low Capacitance Optimized Gate Charge NVMF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 100°C TA = 25°C Steady State TA = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 14 12 3.6 2.5 75 63 107 75 276 −55 to +175 75 48 31 260 A °C A mJ A °C W 1 http://onsemi.com V(BR)DSS 40 V RDS(ON) MAX 9.3 mW @ 10 V 13.6 mW @ 4.5 V D (5,6) ID MAX 75 A Unit V V A S (1,2,3) W N−CHANNEL MOSFET G (4) A S S S G MARKING DIAGRAM D DFN5 (SO−8FL) CASE 488AA STYLE 1 A Y W ZZ 5834L AYWZZ D = Assembly Location = Year = Work Week = Lot Traceability D D Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ORDERING INFORMATION Device NTMFS5834NLT1G NVMFS5834NLT1G Package Shipping† Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings...