NTF6P02

NTF6P02, NVF6P02 MOSFET – Power, P-Channel, SOT-223 -10 A, -20 V Features Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Management in Portables and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage VDSS −20 Gate−to−Source Voltage VGS ±8.0 Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Single Pulse (tp = 10 ms) ID −10 ID −8.4 IDM −35 Total Power Dissipation @ TA = 25°C PD 8.3 Operating and Storage Temperature Range TJ, Tstg −55 to +150 Unit Vdc Vdc Adc Apk W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, IL(pk) = −10 A, L = 3.0 mH, RG = 25W) EAS 150 mJ Thermal Resistance − Junction to Lead (Note 1) − Junction to Ambient (Note 2) − Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RqJL RRqqJJAA TL °C/W 15 71.4 160 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and relia...