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MMSZ8V2ET1G Dataheets PDF



Part Number MMSZ8V2ET1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Zener Voltage Regulators
Datasheet MMSZ8V2ET1G DatasheetMMSZ8V2ET1G Datasheet (PDF)

MMSZxxxET1G Series, SZMMSZxxxET1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. Specification Features http://onsemi.com          500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 56 V Package Designed for Optimal Automated Board Assembly Small Package Si.

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MMSZxxxET1G Series, SZMMSZxxxET1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. Specification Features http://onsemi.com          500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 56 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Peak Power − 225 W (8 X 20 ms) AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available* SOD−123 CASE 425 STYLE 1 1 Cathode 2 Anode MARKING DIAGRAM Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL  25C Total Power Dissipation on FR−5 Board, (Note 2) @ TL = 75C Derated above 75C Thermal Resistance, Junction−to−Ambient (Note 3) Thermal Resistance, Junction−to−Lead (Note 3) Junction and Storage Temperature Range Symbol Ppk PD Max 225 500 6.7 340 150 −55 to +150 Unit W 1 xxx MG G 260C for 10 Seconds xxx = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMSZxxxET1G Package SOD−123 (Pb−Free) SOD−123 (Pb−Free) SOD−123 (Pb−Free) Shipping† 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel mW mW/C C/W C/W C SZMMSZxxxET1G MMSZxxxET3G RqJA RqJL TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 11 2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint 3. Thermal Resistance measurement obtained via infrared Scan Method *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. January, 2012 − Rev. 7 1 Publication Order Number: MMSZ2V4ET1/D Free Datasheet http://www.datasheet4u.com/ MMSZxxxET1G Series, SZMMSZxxxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol VZ IZT ZZT IR VR IF VF Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF VZ VR IR VF IZT V IF I Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 4 and 5) Device Marking CL1 CL2 CL3 CL4 CL5 CL6 CL7 CL8 CL9 CM1 CM2 CM3 CM4 CM5 CM6 CM7 CM8 CM9 CN1 CN2 CN3 CN4 CN5 CN6 CN7 @ IZT1 = 5 mA Min 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 Nom 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 Max 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 W 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 Min 1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2 4.8 5.6 6.3 6.9 7.6 8.4 9.3 10.2 11.2 12.3 13.7 15.2 16.7 18.7 20.7 22.7 ZZT1 (Note 6) VZ2 (V) (Notes 4 and 5) ZZT2 (Note 6) Max Reverse Leakage Current IR @ VR W 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 mA 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 V 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 @ IZT2 = 1 mA Max 2.1 2.4 2.7 2.9 3.3 3.5 4.0 4.7 5.3 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.0 15.5 17.0 19.0 21.1 23.2 25.5 Device* MMSZ2V4ET1G MMSZ2V7ET1G MMSZ3V0ET1G MMSZ3V3ET1G MMSZ3V6ET1G MMSZ3V9ET1G MMSZ4V3ET1G MMSZ4V7ET1G MMSZ5V1ET1G MMSZ5V6ET1G MMSZ6V2ET1G MMSZ6V8ET1G MMSZ7V5ET1G MMSZ8V2ET1G MMSZ9V1ET1G MMSZ10ET1G MMSZ11ET1G MMSZ12ET1G MMSZ13ET1G MMSZ15ET1G MMSZ16ET1G MMSZ18ET1G MMSZ20ET1G MMSZ22ET1G MMSZ24ET1G 4. The type numbers shown have a standard tolerance of 5% on the no.


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