MMDL770T1G

MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features Extremely Low Minority Carrier Lifetime Very Low Capacitance − 1.0 pF @ 20 V Low Reverse Leakage − 200 nA (max) High Reverse Voltage − 70 V (min) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Rating Reverse Voltage Symbol VR Value 70 Unit Vdc 1 CATHODE 2 ANODE 2 1 SOD−323 CASE 477 STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 200 1.57 635 −55 to +150 Unit mW mW/°C °C/W °C RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 Minimum Pad MARKING DIAGRAM 5H M G G 5H = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMDL770T1G Package SOD−323 (Pb−Free) Shipping† 3000 / Tape & Reel †For information ...