IRLHM620PBF

PD - 97565A IRLHM620PbF VDS VGS max RDS(on) max (@VGS = 4.5V) 20 ±12 2.5 3.5 52 40h V V D 5 4 G 3 S 2 S 1 S HEXFET® Power MOSFET mΩ mΩ nC A D 6 D 7 D 8 RDS(on) max (@VGS = 2.5V) 3.3mm x 3.3mm PQFN Qg (typical) ID (@Tc(Bottom) = 25°C) Applications Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET Features and Benefits Features Low RDSon (<2.5mΩ) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRLHM620TRPBF IRLHM620TR2PBF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Max. 20 ±12 26 21 40 40 160 2.7 37 0.022 -55 to + 150 Units V A g Power Dissipation g...