IRLH5036PBF

PD -96300 IRLH5036PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 4.5V) 60 5.5 44 1.2 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Low RDSon (< 5.5 mΩ @ Vgs = 4.5V ) Low Thermal Resistance to PCB (< 0.5°C/W) 100% Rg tested Low Profile (<0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRLH5036TRPBF IRLH5036TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 60 ± 16 20 16 100 100 400 3.6 250 Units V g g c h h A W W/°C °C...