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BZT52C3V0S Dataheets PDF



Part Number BZT52C3V0S
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description (BZT52C2V4S - BZT52C75S) SMD Zener Diode
Datasheet BZT52C3V0S DatasheetBZT52C3V0S Datasheet (PDF)

BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features —Wide zener voltage range selection : 2.4V to 75V —VZ Tolerance Selection of ±5% —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant —Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Unit (mm) Min 1.15 2.30 0.25 1.60 0.80 0.05 Max 1.35 2.70 0.40 1.80 1.00 0.20 Unit (inch) Min 0.09.

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BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features —Wide zener voltage range selection : 2.4V to 75V —VZ Tolerance Selection of ±5% —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant —Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Unit (mm) Min 1.15 2.30 0.25 1.60 0.80 0.05 Max 1.35 2.70 0.40 1.80 1.00 0.20 Unit (inch) Min 0.091 0.010 Max 0.106 0.016 0.045 0.053 Mechanical Data —Case : Flat lead SOD-323 small outline plastic package —Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed —High temperature soldering guaranteed: 260 °C/10s —Polarity : Indicated by cathode band —Weight : 4.02±0.5 mg Dimensions A B C D E F 0.063 0.071 0.031 0.039 0.002 0.008 Ordering Information Part No. BZT52CxxS RR Package SOD-323F Packing 3Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25 °C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Forward Voltage Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range IF=10mA (Note 1) Symbol PD VF RθJA TJ, TSTG Value 200 1 625 -65 to + 150 Units mW V °C/W °C Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage VBR IZK ZZK IZT VZ ZZT Forward Region : Voltage at I ZK : Test current for voltage V BR : Dynamic impedance at I ZK : Test current for voltage V Z : Voltage at current I ZT : Dynamic impedance at I ZT : Maximum steady state current : Voltage at I ZM IZT IZM BreakdownRegion Leakage Region IZM VZM Version : C09 Free Datasheet http://www.datasheet4u.com/ BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers Part Number BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C5V1S BZT52C5V6S BZT52C6V2S BZT52C6V8S BZT52C7V5S BZT52C8V2S BZT52C9V1S BZT52C10S BZT52C11S BZT52C12S BZT52C13S BZT52C15S BZT52C16S BZT52C18S BZT52C20S BZT52C22S BZT52C24S BZT52C27S BZT52C30S BZT52C33S BZT52C36S BZT52C39S BZT52C43S BZT52C47S BZT52C51S BZT52C56S BZT52C62S BZT52C68S BZT52C75S VZ @ IZT (Volt) Nom 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.11 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 25.65 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 58.90 64.60 71.25 Min 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 Max 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.86 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 28.35 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 65.10 71.40 78.75 IZT(mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 ZZT @ IZT(Ω) Max 100 100 100 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 200 215 240 255 IZK(mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ZZK @ IR @ VR(μ IZK(Ω) Max A) Max 564 564 564 564 564 564 564 470 451 376 141 75 75 75 94 141 141 141 160 188 188 212 212 235 235 282 282 306 329 329 353 353 376 400 423 447 470 45 18 9 4.5 4.5 2.7 2.7 2.7 1.8 0.9 2.7 1.8 0.9 0.63 0.45 0.18 0.09 0.09 0.09 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 0.045 VR(V) 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.0 25.2 27.3 30.1 33.0 35.7 39.2 43.4 47.6 52.5 Notes: 1. The Zener Voltage (V Z) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current (I ZT or IZK) is superimposed to I ZT or IZK. Version : C09 Free Datasheet http://www.datasheet4u.com/ BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 1000 100 FIG 2 Zener Breakdown Characteristics Ta=25°C 10 Forward Current (mA) 100 Zener Current (mA) 1 1.1 1.2 Ta=25°C 10 1 0 0.1 1 0.4 0.5 0.6 0.7 0.8 0.9 0 0.01 0 1 2 3 4 5 6 7 8 9 10 11 12 Forward Voltage (V) Zener Voltage (V) FIG 3 Zener Breakdown Characteristics 100 300 FIG 4 Admissible Power Disspation Curve Power Dissipation (mW) 250 200 150 100 50 0 Zener Current (mA) 10 1 0 0 15 25.


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