2N4036

2N4036 2N4037 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD PD TJ, Tstg ΘJC 2N4036 90 2N4037 60 65 40 7.0 7.0 1.0 0.5 5.0 1.0 -65 to +200 35 UNITS V V V A A W W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N4036 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V - 1.0 ICBO VCB=60V -- ICEX VCE=85V, VEB=1.5V - 100 ICEX VCE=30V, VEB=1.5V, TC=150°C -- IEBO VEB=7.0V - 10 IEBO VEB=5.0V -- BVCEO IC=100mA 65 - VCE(SAT) IC=150mA, IB=15mA - 0.65 VBE(SAT) IC=150mA, IB=15mA - 1.4 VBE(ON) VCE=10V, IC=150mA -- hFE VCE=10V, IC=0.1mA 20 - hFE VCE=10V, IC=1.0mA -- hFE VCE=10V, IC=150mA 40 140 hFE VCE=2.0V, IC=150mA 20 200 hFE VCE=10V, IC=500mA 20 - fT VCE=10V, IC=50mA, f=20MHz 60 - Cob VCB=10V, IE=0, f=1.0MHz - 30 ton VCE=30V, IC=150mA, IB1=IB2=15mA - 110 toff VCE=30V, IC=150mA, IB1=IB2=15mA - 700 2N4037 MIN MAX -- 0.25 -- 100 -- 1.0 40 - 1.4 -- 1.5 -15 50 250 --60 - 30 --- UNITS µA µA µA mA...