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2SD692

Silicon NPN Darlingtion Power Transistor

Description

isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amp...

Inchange Semiconductor

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