DF N1 0
PMCXB900UE
7 October 2013
10B -6
20 V, complementary N/P-channel Trench MOSFET
Product data sheet
1. Genera...
DF N1 0
PMCXB900UE
7 October 2013
10B -6
20 V, complementary N/P-channel Trench MOSFET
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM
3. Applications
Relay driver High-speed line driver Level shifter Power management in battery-driven portables
4. Quick reference data
Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance drain-source on-state resistance drain-source voltage drain current Conditions VGS = 4.5 V; ID = 600 mA; Tj = 25 °C Min Typ 470 Max 620 Unit mΩ
TR1 (N-channel), Static characteristics
TR2 (P-channel), Static characteristics RDSon VGS = -4.5 V; ID = -500 mA; Tj = 25 °C 1.02 1.4 Ω
TR1 (N-channel) VDS ID VDS ID Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C
[1] [1]
-
-
20 600
V mA
TR2 (P-channel) drain-source voltage drain current -20 -500 V mA
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NXP Semiconductors
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
2...