STP15L01F

r Pr STP15L01/F Ver1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 15A R DS(ON) (m Ω) Typ 110 @ VGS=10V 121 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TO-220 ±20 TC=25°C TC=70°C 15 12.6 45 TO-220F 100 ±20 15 45 25 25 17.5 e e e Units V V A A A mJ W W °C 12.6 Single Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C 58 40 Operating Junction and Storage Temperature Range -55 to 175 THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 2.6 62.5 6 62.5 °C/W °C/W Details are subject to change without notice. Nov,01,2010 1 www.samhop.com.tw Free Datasheet http://www.datasheet4u.com/ STP15L01/F ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Ver1.0 Min 100 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 1 ±100 uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-St...