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2N3957 Dataheets PDF



Part Number 2N3957
Manufacturers ETC
Logo ETC
Description N-Channel Dual Silicon Junction Field-Effect Transistor
Datasheet 2N3957 Datasheet2N3957 Datasheet (PDF)

B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides) – 50 V 50 mA 250 mW 500 mW 4.3 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdow.

  2N3957   2N3957



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B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides) – 50 V 50 mA 250 mW 500 mW 4.3 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Drain Gate Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio gfs gos Ciss Cdgo Crss NF | IG1 – IG2 | IDSS1 / IDSS2 | VGS1 – VGS2 | ∆VGS1– VGS2 ∆T 2N3957 Min V(BR)GSS IGSS IG VGS VGS(OFF) VGS(F) IDSS 0.5 – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 –4 – 4.5 2 5 Max 2N3958 Min – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 0.5 –4 – 4.5 2 5 Max Unit V pA nA pA nA V V V V mA Process NJ16 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VGS = – 30V, VDS = ØV VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 50 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 1 nA VDS = Ø, IG = 1 mA VDS = 20V, VGS = ØV TA = 125°C TA = 125°C 1000 3000 1000 3000 1000 35 4 1.5 1.2 0.5 10 0.9 1 20 6 7.5 0.9 1 0.85 0.85 1000 35 4 1.5 1.2 0.5 10 1 25 8 10 1 µS µS µS pF pF pF dB nA mV mV mV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 10V, IS = ØA VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV RG = 10 MΩ VDS = 20V, ID = 200 µA VDS = 20V, VGS = ØV VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA f = 1 kHz f = 200 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 100 Hz TA = 125°C TA = 25°C to – 55°C TA = 25°C to 125°C gfs1 / gfs2 f = 1 kHz TOÐ71 Package See Section G for Outline Dimensions 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Pin Configuration 1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate www.interfet.com .


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