Semiconductor
2N3906
PNP Silicon Transistor
Descriptions
• General small signal application • Switching application
F...
Semiconductor
2N3906
PNP Silicon
Transistor
Descriptions
General small signal application Switching application
Features
Low collector saturation voltage Collector output capacitance Complementary pair with 2N3904
Ordering Information
Type NO. 2N3906 Marking 2N3906 Package Code T0-92
Outline Dimensions
3.45±0.1 4.5±0.1 2.25±0.1
unit : mm
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ. 2.54 Typ.
1 2 3
PIN Connections 1. Emitter 2. Base 3. Collector
1.20±0.1
0.38
KST-9011-000
1
2N3906
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-40 -40 -5 -200 625 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICEX hFE VCE(sat) fT Cob td tr ts tf
Test Condition
IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCE=-30V, VEB=-3V VCE=-1V, IC=-10mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VCC=-3Vdc, VBE(off)=-0.5Vdc, IC=-10mAdc, IB1=-1mAdc VCC=-3Vdc,IC=-10mAdc, IB1=IB2=-1mAdc
Min.
-40 -40 -5 100 250 -
Typ. Max...