2N3906
General Purpose Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS Rating
Collec...
2N3906
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS Rating
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol VCEO VCBO VEBO
IC PD
Value 40 40 5.0 200 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Power Dissipation @ TA = 60°C
PD
250
mW
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates Data in addition to JEDEC Requirements.
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COLLECTOR 3
2 BASE
1 EMITTER
TO−92 CASE 29 STYLE 1
123 STRAIGHT LEAD
BULK PACK
1 2 3
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
2N 3906 ALYWG
G
A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of ...