DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N3906 PNP switching transistor
Product specification Superse...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N3906
PNP switching
transistor
Product specification Supersedes data of 1997 Jun 20 1999 Apr 23
Philips Semiconductors
Product specification
PNP switching
transistor
FEATURES Low current (max. 200 mA) Low voltage (max. 40 V). APPLICATIONS High-speed switching in industrial applications. DESCRIPTION
PNP switching
transistor in a TO-92; SOT54 plastic package.
NPN complement: 2N3904. PINNING PIN 1 2 3 collector base emitter
2N3906
DESCRIPTION
1 handbook, halfpage
2 3
1 2 3
MAM280
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open emitter open base open collector CONDITIONS − − − − − − − −65 − −65 MIN. MAX. −40 −40 −6 −200 −300 −100 500 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C
1999 Apr 23
2
Philips Semiconductors
Product specification
PNP switching
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDIT...