3DD13005
Elektronische Bauelemente 4A , 700V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C...
3DD13005
Elektronische Bauelemente 4A , 700V
NPN Plastic-Encapsulated
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
TO-220J
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Rating
700 400 9 4 2 150, -55~150
Unit
V V V A W ° C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Fall time Storage time
http://www.SeCoSGmbH.com/
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat) fT tF tS
Min.
700 400 9 20 5 5 1.8
Typ.
-
Max.
1 0.1 0.05 30 0.3 0.8 1.6 0.6 6.6
Unit
V V V mA mA
Test Condition
IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=5V, IC=1A VCE=5V, IC=10mA IC=1A, IB=0.2A IC=4A, IB=1A IC=2A, IB=0.5A VCE=10V, IC=500mA, f =1MHz IB1= -IB2=0.4A, IC=2A, VCC=120V IC=0.25A
V V V MHz µs µs
Any changes of specification will not be informed individually.
2-Nov-2011 Rev. A
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Free Datasheet http://www.da...