3DD13001

3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications A TO-92 D B CLASSIFICATION OF hFE(1) Product-Rank Range 3DD13001-A 17~23 3DD13001-B 20~26 G H E C F 3 Emitter J 1Base 2Collector 3Emitter Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 1 Base Collector REF. A B C D E 2 Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 600 400 7 0.2 750 150, -55~150 Unit V V V A mW ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) fT tF tS Min. 600 400 7 17 5 8 - Typ. - Max. 100 200 100 26 0.5 1.2 0.3 1.5 Unit V V V µA µA Test Condition IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=600V, IE=0 VCE=40...