SMD Type
Silicon NPN epitaxial planer type 2SD968, 2SD968A
Transistors
Features
High collector to emitter voltage VCEO...
SMD Type
Silicon
NPN epitaxial planer type 2SD968, 2SD968A
Transistors
Features
High collector to emitter voltage VCEO. Large collector power dissipation PC.
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage 2SD968 2SD968A Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
2
Symbol VCBO
Rating 100 120
Unit V V V V V A A W
VCEO VEBO ICP IC PC * Tj Tstg
100 120 5 1 0.5 1 150 -55 to 150
* Printed circuit board: Copper foil area of 1cm or more, and the board thickness of 1.7mm for the collector portion
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1
Free Datasheet http://www.datasheet4u.com/
SMD Type
2SD968, 2SD968A
Electrical Characteristics Ta = 25
Parameter Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance * Pulse measurement Symbol VCEO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Testconditons IC = 100ìA, IB = 0 IC = 100ìA, IB = 0 IE = 10ìA, IC = 0 VCE = 10V, IC = 150mA* VCE = 5V, IC = 500mA* IC = 500mA, IB = 50mA* IC = 500mA, IB = 50mA* VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Min 100 120 5 90 50
Transistors
Typ
Max
Unit V V V
220 100 0.2 0.85 120 11 20 0.6 1.2 V V MHz pF
hFE Classification
Marking Symbol Rank hFE 2SD968 2SD968A WQ VQ Q 90 155 WR VR R 130...