2SK2569
Silicon N Channel MOS FET
REJ03G1018-0300 Rev.3.00 Dec 27, 2006
Application
High speed power switching
Features
Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
D 3 1 2 G 1. Source 2. Gate 3. Drain
S
Note:
Ma...
