TK20E60U

TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 1 2012-02-06 Rev.1.0 Free Datasheet http://www.datasheet4u.com/ TK20E60U 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 3) (Note 3) (Note 1) (Note 1) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR IDR IDRP Tch Tstg Rating 600 ±30 20 40 190 144 10 19 20 40 150 -55 to 150  W mJ A mJ A A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon revi...