TK20D60U

TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK20D60U Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 A Ф3.65 ± 0.2 3.2 2.8 Unit: mm 0.6±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 190 144 20 19 150 −55 to 150 A W mJ A mJ °C °C Unit 1.1 ± 0.15 2.8 MAX. 12.8 ± 0.5 4.5 ± 0.2 9.0 0.62 ± 0.15 15.0 ± 0.3 0.75 ± 0.25 + 0.25 0.57 − 0.10 2.53 ± 0.2 V V Ф0.2 M A 2.54 2.54 Pulse (t = 1 ms) (Note 1) 1 2 3 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 3) 1. Gate 2. Drain (heatsink) 3. Source JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight : 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewin...