ME45P04

ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦18mΩ@VGS=-10V ● RDS(ON)≦25mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252) Top View e Ordering Information: ME45P04 (Pb-free) ME45P04-G (Green product-Halogen free ) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation* Operating Junction Temperature Thermal Resistance-Junction to Case* TC=25℃ TC=70℃ TC=25℃ TC=70℃ Symbol VDS VGS ID IDM PD TJ RθJC Maximum Ratings -40 ±20 -30 -23 -120 25 16 -55 to 150 5 Unit V V A A W ℃ ℃/W *The device mounted on 1in2 FR4 board with 2 oz copper Mar, 2012-Ver1.3 Free Datasheet http://www.datasheet4u.com/ 01 ME45P04/ME45P04-G P- Channel 40-V (D-...