2SD1005
Elektronische Bauelemente 1A , 100V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C”...
2SD1005
Elektronische Bauelemente 1A , 100V
NPN Plastic Encapsulated
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
SOT-89
4
High Breakdown Voltage Excellent DC Current Gain Linearity
A
B C 3 E
C
1
2
CLASSIFICATION OF hFE(1)
Product-Rank Range Marking 2SD1005-W 90~180 BW 2SD1005-V 135~270 BV 2SD1005-U
B
E
D F G H K J L
200~400 BU
Collector
2
PACKAGE INFORMATION
Package SOT-89 MPQ 1K Leader Size 7 inch 1
Base
REF. A B C D E F
3
Emitter
Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20
REF. G H J K L
Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Maximum Junction to Ambient Junction & Storage Temperature
Symbol
VCBO VCEO VEBO IC PC RθJA TJ, TSTG
Ratings
100 80 5 1 500 250 150, -55~150
Unit
V V V A mW ° C/W ° C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition Frequency Collector Output Capacitance
*Pulse test
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