isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Swi...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed and high voltage switching applications. ·Switching
regulator applications. ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Pulse
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC5354
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 800V; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
2SC5354
MIN TYP. MAX UNIT
800
V
900
V
1.0
V
1.3
V
0.1 mA
1.0 mA
10
15
NOT...