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2SC535

Renesas

Silicon NPN Transistor

2SC535 Silicon NPN Epitaxial Planar REJ03G0683-0200 (Previous ADE-208-1047) Rev.2.00 Aug.10.2005 Application VHF amplif...


Renesas

2SC535

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2SC535 Silicon NPN Epitaxial Planar REJ03G0683-0200 (Previous ADE-208-1047) Rev.2.00 Aug.10.2005 Application VHF amplifier, mixer, local oscillator Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 7 Free Datasheet http://www.datasheet4u.com/ 2SC535 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Power gain Noise figure Input admittance (typ) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE*1 VBE VCE(sat) fT Cob PG NF yie Min 30 20 4 — 60 — — 450 — 17 — Typ — — — — — 0.72 0.17 940 0.9 20 3.5 1.3 + j5.3 –0.078 – j0.41 32 – j10 0.08 + j0.82 Max — — — 0.5 200 — — — 1.2 — 5.5 Unit V V V µA V V MHz pF dB dB mS mS mS mS Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 1 mA IC = 20 mA, IB =4 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE...




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