Semiconductor
2SC5345UF
NPN Silicon Transistor
Description
• RF amplifier
Features
• High current transition frequenc...
Semiconductor
2SC5345UF
NPN Silicon
Transistor
Description
RF amplifier
Features
High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response
Ordering Information
Type NO. 2SC5345UF Marking E : hFE rank Package Code SOT-323F
Outline Dimensions
unit : mm
1.95~2.25
1.20~1.40
1
1.90~2.10 1.30 Typ.
3 2
0.16 Max.
0.10 Max.
0.60~0.80
0.40 Max.
PIN Connections 1. Base 2. Emitter 3. Collector
KST-3045-001
1
Free Datasheet http://www.datasheet4u.com/
2SC5345UF
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature range
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
30 20 4 20 150 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob
Test Condition
IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IE=-1mA VCB=6V, IE=0, f=1MHz
Min. Typ. Max.
30 20 4 40 550 1.4 0.5 0.5 240 0.3 -
Unit
V V V µA µA V...