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2SC5345UF

AUK

NPN Silicon Transistor

Semiconductor 2SC5345UF NPN Silicon Transistor Description • RF amplifier Features • High current transition frequenc...


AUK

2SC5345UF

File Download Download 2SC5345UF Datasheet


Description
Semiconductor 2SC5345UF NPN Silicon Transistor Description RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Ordering Information Type NO. 2SC5345UF Marking E : hFE rank Package Code SOT-323F Outline Dimensions unit : mm 1.95~2.25 1.20~1.40 1 1.90~2.10 1.30 Typ. 3 2 0.16 Max. 0.10 Max. 0.60~0.80 0.40 Max. PIN Connections 1. Base 2. Emitter 3. Collector KST-3045-001 1 Free Datasheet http://www.datasheet4u.com/ 2SC5345UF Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25°C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 150 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob Test Condition IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IE=-1mA VCB=6V, IE=0, f=1MHz Min. Typ. Max. 30 20 4 40 550 1.4 0.5 0.5 240 0.3 - Unit V V V µA µA V...




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