2SC5345N

Semiconductor 2SC5345N NPN Silicon Transistor Description RF amplifier Features High transition frequency : fT=550MHz(Typ.) @[VCE=6V, IC=1mA] Low output capacitance : Cob=1.4pF (Typ.) @[VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Ordering Information Type NO. 2SC5345N Marking C5345 Package Code TO-92N Outline Dimensions unit : mm 4.20~4.40 4.20~4.40 2.25 Max. 0.52 Max. 13.50~14.50 0.90 Max. 1.27 Typ. 2.14 Typ. 1 2 3 3.55 Typ 3.09~3.29 0.40 Max. PIN Connections 1. Emitter 2. Collector 3. Base KSD-T0C006-000 1 Free Datasheet http://www.datasheet4u.com/ 2SC5345N Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range range (Ta=25°C) Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 30 20 4 20 400 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO ICBO IEBO hFE* VCE(sat) VBE fT Cob Test Condition IC=5mA, IB=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz Min. Typ. Max. 20 40 0.7 550 1.4 0.5 0.5 240 0.3 0.9 - Unit V µA µA V V MHz pF * : hFE rank / R : 40~80,...