SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC5069
Features
High current capacity. Adoption of MBIT ...
SMD Type
Transistors
NPN Epitaxial Planar Silicon
Transistor 2SC5069
Features
High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base Current Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm X0.8mm).
2
Symbol VCBO VCEO VEBO IC ICP IB PC * Tj Tstg
Rating 30 25 15 2 4 0.4 1.5 150 -55 to +150
Unit V V V A A A W
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1
Free Datasheet http://www.datasheet4u.com/
SMD Type
2SC5069
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-ON Time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20 V, IE=0 VEB = 10 V, IC=0 VCE = 5 V , IC = 500 mA VCE = 5 V , IC = 1A VCE = 10 V , IC = 50 mA VCB = 10V , f = 1.0MHz
Transistors
Min
Typ
Max 100 100
Unit ìA ìA
800 600
1500
3200
260 27 0.15 0.85 30 25 15 0.14 0.5 1.2
MHz pF V V V V V ìs
VCE(sat) IC = 1A , IB = 20 mA VBE(sat) IC = 1A , IB = 20 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton
Strange Time
tstg
1.35
ìs
Fall Time
tf...