2SC5025

2SC5025 Silicon NPN Epitaxial Application High frequency amplifier TO–126FM Features Excellent high frequency characteristics fT = 1.2 GHz typ Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ic(peak) PC PC*1 Tj Tstg Rating 30 20 3.5 0.3 0.5 1 5 150 –55 to +150 Unit V V V A A W W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Free Datasheet http://www.datasheet4u.com/ 2SC5025 Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO ICBO IEBO hFE VBE VCE(sat) fT Cob Min 20 Typ — Max — Unit V Test Conditions IC = 10 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 mA V VCE = 5 V, IC = 300 mA IC = 300 mA, IB = 60 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE...