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2SC4789

Hitachi

Silicon NPN Transistor

2SC4789 Silicon NPN Triple Diffused Application Character Display Horizontal Deflection Output TO–3PL Features • High...


Hitachi

2SC4789

File Download Download 2SC4789 Datasheet


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2SC4789 Silicon NPN Triple Diffused Application Character Display Horizontal Deflection Output TO–3PL Features High speed switching time: 0.5 µs max High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A Suitable for large size CRT Display 1 1. Base 2. Collector 3. Emitter 3 2 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ic(surge) PC*1 Tj Tstg Rating 1500 800 6 25 30 150 150 –55 to +150 Unit V V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Free Datasheet http://www.datasheet4u.com/ 2SC4789 Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CEO V(BR)EBO ICES hFE VCE(sat) VBE(sat) tf Min 800 Typ — Max — Unit V Test Conditions IC = 10 mA, RBE = ∞ IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 16 A, IB = 4 A IC = 16 A, IB = 4 A ICP = 10 A, IB1 ...




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