AON6970

AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested Q1 30V 58A <5.4mΩ <8.5mΩ Q2 30V 85A <1.5mΩ <2.3mΩ Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial 100% Rg Tested DFN5X6D Top View S2 S2 Bottom View G2 PHASE (S1/D2) D1 D1 PIN1 D1 D1 PIN1 G1 Top View Bottom View PHASE S1/D2 S2 D1 S1/D2 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Max Q2 30 ±20 85 66 340 42 33 65 106 36 78 31 4.1 2.6 -55 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C ±20 58 36 135 24 19 35 31 36 31 12 5 3.2 A A mJ V W W °C Avalanche Energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 20 50 3.3 Typ Q2 25 56 1...