30V Dual Asymmetric N-Channel MOSFET
AON6934A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology...
Description
AON6934A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Applications
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Q1 30V 28A <5.2mΩ <9.5mΩ
Q2 30V 36A <2.9mΩ <4.4mΩ
Top View
DFN5X6
Bottom View
PIN1
PIN1
Top View
BoBtotottmomViVeiwew
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain CurrentG
TC=25°C TC=100°C
ID
28 36 22 28
Pulsed Drain Current C
IDM 112 144
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS EAS
22 17 32* 26*
30 24 46* 53*
VDS Spike
100ns
VSPIKE
36
36
TC=25°C Power Dissipation B TC=100°C
PD
31 12
33 13
TA=25°C Power Dissipation A TA=70°C
PDSM
3.6 2.3
4.3 2.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t ≤ 10s Steady-State
Symbol RθJA
Maximum Junction-to-Case
Steady-State
RθJC
*Q1 L=0.1mH, IAS=20A, EAS=20mJ, Starting TJ=25°C.
*Q2 L=0.1mH, IAS=33A, EAS=54mJ, Starting TJ=25°...
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