AON6926

AON6926 30V Dual Asymmetric N-Channel MOSFET General Description The AON6926 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Q2 "Low Side" MOSFET is an SRFET™ that features low RDS(ON) to reduce conduction losses as well as an integrated Schottky diode with low QRR and Vf to reduce switching losses. The AON6926 is well suited for use in compact DC/DC converter applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 44A <11mΩ <14mΩ Q2 30V 50A <8.5mΩ <12mΩ DFN5X6 Top View Bottom View PIN1 Top View Bottom View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage VGS Gate-Source Voltage ±20 Continuous Drain Current Continuous Drain Current Avalanche Current C Avalanche Energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case A Max Q2 30 ±20 50 32 140 12 10 15 11 35 14 2.1 1.3 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG 44 28 100 11 9 27 36 31 12.5 1.9 1.2 Pulsed Drain Current ...