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AON6920 Dataheets PDF



Part Number AON6920
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON6920 DatasheetAON6920 Datasheet (PDF)

AON6920 30V Dual Asymmetric N-Channel MOSFET General Description The AON6920 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON6920 is well suited for use in compact DC/DC converter applications. Product.

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AON6920 30V Dual Asymmetric N-Channel MOSFET General Description The AON6920 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON6920 is well suited for use in compact DC/DC converter applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 60A <5.2mΩ <7.8mΩ Q2 30V 85A <1.8mΩ <2.7mΩ DFN5X6A Top View S2 S2 S2 Bottom View G2 (S1/D2) D1 D1 D1 D1 G1 Top View Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current C C Max Q1 30 ±20 60 38 200 15 12 40 80 31 12.5 2 1.3 -55 to 150 Max Q2 Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG TC=25° C 85 66 490 26.5 21 78 304 104 41.5 2.2 1.4 A A mJ W W ° C A Avalanche Energy L=0.1mH Power Dissipation B TC=100° C TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 25 50 3.1 Typ Q2 20 45 0.9 Max Q1 Max Q2 30 25 60 55 4 1.2 Units ° C/W ° C/W ° C/W Rev 1 : April 2011 www.aosmd.com Page 1 of 10 Free Datasheet http://www.datasheet4u.com/ AON6920 C unless otherwise noted) Q1 Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.2 200 4.3 6.6 6.2 70 0.7 1 30 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 370 10 0.8 13 VGS=10V, VDS=15V, ID=20A 1300 530 35 1.7 17 7.2 3.9 1.8 5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 16 31 16 20 4 21 39 26 47 1560 690 60 2.6 21.0 5.2 8 7.8 1.7 Min 30 1 5 100 2.3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150° C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep initial TJ =25° C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150° C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25° C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: April 2011 www.aosmd.com Page 2 of 10 Free Datasheet http://www.datasheet4u.com/ AON6920 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 100 4.5V 80 ID (A) 60 40 20 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 7 VGS=4.5V 6 RDS(ON) (mΩ ) Normalized On-Resistance 0 1.5 2.5 3 3.5 VGS(Volts) Fig.


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