AON6912A

AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON6912A is well suited for use in compact DC/DC converter applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 34A <13.7mΩ <19.3mΩ Q2 30V 52A <7.3mΩ <10.4mΩ DFN5X6 Top View Bottom View PIN1 Top View Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Max Q1 30 ±20 34 21 85 10 8 22 24 22 9 1.9 1.2 -55 to 150 Max Q2 Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG TC=25° C 52 33 130 13.8 10.8 28 80 30 12 2.1 1.3 A A mJ W W ° C A Avalanche Energy L=0.1mH C Power Dissipation B TC=100° C TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 29 56 4.5 Typ Q...