AON6884

AON6884 40V Dual N-Channel MOSFET General Description The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 40V 34A < 11.3mΩ < 13.8mΩ 100% UIS Tested 100% Rg Tested D1 D2 Top View S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G1 S1 G2 S2 DFN5X6 EP2 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B C Maximum 40 ±20 34 21 120 9 7 35 61 21 8 1.6 1 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C C TC=100° TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 35 65 5 Max 45 80 6 Units ° C/W ° C/W ° C/W Rev 1: November 2010 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6884 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=40V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID...